A 230mV-to-500mV 375KHz-to-16MHz 32b RISC Core in 0.18μm CMOS
نویسندگان
چکیده
Aggressive voltage scaling to 0.5V and below is gaining attention due to the interest of using solar cells for portable systems. Static swapped-body biasing [1] and ultra-dynamic voltage scaling (UDVS) [2] are two representative designs in this respect. However, neither of them offers comprehensive treatment of the related design problems. This paper presents a 230-to-500mV 32b RISC core design using the ultra-low voltage CMOS (ULV-CMOS) technique. ULV-CMOS is built from the SLVCMOS scheme [3] with several add-on techniques. Compared to UDVS, which also has active and sleep operations, ULV-CMOS achieves 125× and 6.7× performance improvement when VDD is 250mV and 500mV, respectively.
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